Yan Zhang PhD
candidate Dept. of Electrical &
Computer Engineering University of
Massachusetts, Amherst Amherst, MA 01002
Office: Room Marcus 02 Phone: (413)545-4762 E-mail:yazhang@ecs.umass.edu
Expected
graduation date: Dec. 2009
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OBJECTIVE
Seeking a Postdoc or full-time R&D position in solid-state/semiconductor device physics, semiconductor device modeling and simulation, applied electromagnetics.
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RESEARCH INTERESTS
Electronic Transport in Semiconductors, Monte Carlo Simulation, Solid-state/Semiconductor Device Physics, Applied Electromagnetics.
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AFFILIATED
RESEARCH LABORATORY
Emerging Electronics Laboratory
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CURRICULUM VITAE
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PUBLICATIONS
1. Y. Zhang, M. V. Fischetti, B. Sor´ee, W. Magnus, “Physical Modeling of Strain-dependent Hole Mobility in Ge p-channel Inversion Layers”, J. Appl. Phys., Vol. 106, Issue 8, Oct. 2009.
2. Y. Zhang, M. V. Fischetti, “Comparison of Hole Mobility in Ge and III-V p-channels”, International Workshop on Computational Electronics (IWCE), Beijing, China, May. 2009.
3. Y. Zhang, M. V. Fischetti, B. Soree, W. Magnus, “Calculating the hole mobility in Ge and GaAs p-channels with SiO2 insulator”, IMEC Newsletter 54, pp. 4, Oct. 2008.
4. Y. Zhang, J. Kim and M. V. Fischetti, “Self-consistent Calculation for Valence Band Structure and Hole Mobility in P-channel Inversion Layers”, Journal of Computational Electronics 7, pp. 176-180, 2008.
5. M. V. Fischetti, T. O’Regan, S. Narayanan, C. Sachs, S. Jin, J. Kim, and Y. Zhang, “Theoretical Study of Some Physical Aspects of Electronic Transport in nMOSFETs at the 10 nm Gate-Length”, IEEE Trans. Electron Devices, Vol. 54, No. 9, pp. 2116-2136, Sep. 2007.
6. Y. Zhang, J. Kim. and M. V. Fischetti, “Self-consistent Calculation for Valence Band Structure and Hole Mobility in P-channel Inversion Layers”, International Workshop on Computational Electronics (IWCE), Amherst, MA, Oct. 2007.
7. Y. Zhang and M. V. Fisschetti, “Self-Consistent Calculation of Valence Band Structure and Hole Mobility in PMOS Inversion Layer”, TECHON, Austin, TX, Sep. 2007.
8. Y. Zhang, Z. N. Chen, and M. Y. W. Chia, Effects of finite ground plane and dielectric substrate on planar dipoles for UWB applications, IEEE Int. Symp. Antennas Propagat., Monterey, California, USA, Jun. 20-26, 2004, pp. 2512-2515.
9. Y. Zhang and W. B. Dou, “E-plane Forked T-junction Analyzed by FDTD Method”, International Journal of Infrared and Millimeter Waves, Vol. 24, Issue 2, pp.217-229, Feb. 2003.
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PRESENTATIONS
AND POSTERS
1. International
Workshop on Computational Electronics (IWCE), Beijing, China, May. 2009.
2. 2009
Materials Structures and Devices (MSD) Annual Review, MIT, MA, May.
2009.
3. SRC
Nonclassical CMOS Research Center Review, Santa Barbara, CA, Apr. 2009.
4. Edinburgh Fringe Poster Session,
ESSDERC-ESSCIRC, 2008 Conference, Edinburgh, Scotland, Sep. 2008.
5. The 22nd General Conference of the
Condensed Matter Division of the European Physical Society (EPS-CMD22),
Rome, Italy, Aug. 2008.
6. International Workshop on Computational Electronics
(IWCE), Amherst, MA, Oct. 2007.
7. TECHON, Austin, TX, Sep. 2007.
8. SRC GRC Modeling and Simulation/Compact
Modeling Review, The Solution Center, Research Triangle Park, NC, Jun.
2007
9. IEEE
Antennas and Propagation Society International Symposium and USNC/URSI
National Radio Science Meeting, Jun. 2004.