Yan Zhang

Dept. of Electrical & Computer Engineering

University of Massachusetts, Amherst

Amherst, MA 01002

Office: Room Marcus 02

Phone: (413)545-4762

E-mail: yazhang@ecs.umass.edu

Expected graduation date: 01/2009

 
 
 

 


      

 

 

n        Objective

Looking for internship in the area of hole transport in relaxed/strained Si, Ge and Ⅲ&Ⅴ pMOSFET. Availability date is September, 2008.

 

n        EDUCATION

Ph.D in Electrical Engineering, University of Massachusetts, Amherst              Advisor: Professor Massimo Fischetti,                     01/2005 ~ Present

M.S. in Electrical Engineering, Southeast University, Nanjing, China                               09/2000 ~ 04/2003

B.E.  in Radio Physics, Lanzhou University, Lanzhou, China                                              09/1995 ~ 06/1999

 

n        PUBLICATION

1.        Yan Zhang and M.V. Fischetti, “Self-Consistent Calculation of the Subband Structure and Hole Mobility in Ge, InGaAs,GaSb, and InSb p-Channels” submit to IEEE Workshop for Computational Electronics (IWCE), Amherst, MA, Oct, 2007.

2.        Yan Zhang and M.V. Fisschetti, “Self-Consistent Calculation of Valence Band Structure and Hole Mobility in PMOS Inversion Layer”, to appear, TECHON, Austin, TX, Sept, 2007.

3.        M. V. Fischetti, T. O’Regan, S. Narayanan, C. Sachs, S. Jin, J. Kim, and Y. Zhang, “Theoretical Study of Some Physical Aspects of Electronic Transport in nMOSFETs at the 10 nm Gate-Length”, to appear,  IEEE Trans. Electron Devices

4.        Yan Zhang and R. Janaswamy, “Effect of Antenna Beamwidth on Fabry’s Technique”, Poster of NSF CASA annual site review, UMass, Amherst, April, 2006

5.        Yan Zhang and Z. Chen, “Effects of Finite Ground Plane and Dielectric Substrate on Planar Balance-fed UWB Antennas”, in the Proc. Of  IEEE AP-S International Symposium and USNC/URSI National Radio Science Meeting, Monterey, CA, Jun. 2004.

6.        Yan Zhang and Wenbin Dou, “E-plane Forked T-junction Analyzed by FDTD Method”, International Journal of Infrared and Millimeter Waves, Vol. 24, No. 2, pp.217-229, Feb.2003.

7.        Yan Zhang and Wenbin Dou, “Analysis of Several E-plane T-junctions by FDTD Method”, 1st National Military Microwave Conference, Suzhou, China, 2002 (in Chinese)

 

 

n        EXPERIENCE

 

1.        Research Assistant, Emerging Electronics Lab, UMass, Amherst

06/2006 ~ Present

Self-consistent calculation for valence band structure; hole mobility in relaxed/strained Si, Ge and Ⅲ &Ⅴp-channel

2.        Research Assistant, Engineering Research Center for Collaborative Adaptive Sensing of the Atmosphere, UMass, Amherst

01/2005 ~ 06/2006

Study the effect of antenna beamwidth on retrieving the near-surface meteorological information from radar received signals

3.        Internship, I2R, Signapore

08/2003 ~ 02/2004

Design and simulate the ultra-wide band (UWB) antenna

4.        System Engineer, BENQ Inc., Nanjing, P.R. China

04/2003~07/2003

Study the 3rd generation (3G) wireless communication CDMA standard; Mobile phone prototype test.

5.        Research Assistant, the State Key Lab of Millimeter Waves, China

              09/2000 ~ 04/2003

       Study the property of millimeter wave circuit component – forked T-junctions by finite difference time domain method (FDTD)

 

n        TECHNICAL SKILLS

1.        Programming Languages: Fortran, Matlab, C/C++ ;

2.        Operating Systems: Windows (95/98/2000/XP), UNIX, Linux

3.        Professional Hardware Tools: HP Network Analyzer 8753 C & 8510; Signal Generator; Spectrum analyzer;

 

n        AWARDS

1.        The David Navon Scholarship Award for outstanding research in solid-state electronics, UMass, Amherst, May, 2007

2.        Research Assistantship in CASA (2005 ~ 2006), SRC (2006 ~ 2007), UMass, Amherst

3.        Internship in I2R, Singapore 08/2003~ 02/2004

4.        Scholarship for excellent undergraduate of Lanzhou University 1996~1999

5.        Award for Excellent Undergraduate Thesis of Lanzhou University 06/1999