Seonghoon Jin
Postdoctoral Research Associate

2 Marcus Hall
University of Massachusetts
100 Natural Resources Rd
Amherst, MA 01003-9292

email: sjin@ecs.umass.edu
phone: 413.545.4762
EDUCATION:
  • 2006   Ph.D in Electrical and Computer Engineering, Seoul National University.
  • 2001   B.S. in Electrical and Computer Engineering, Seoul National University.

    RESEARCH INTERESTS:
    My research interests include various aspects of electronic transport in semiconductor devices and their modeling and simulation. Details of my research area are as follows:
    1) Modeling of dissipative quantum transport based on the nonequilibrium Green's function technique or quantum corrected macroscopic transport models
    2) Modeling of microscopic scattering mechanisms for mobility calculations and Monte Carlo simulations in low-dimensional systems (UTBSOI MOSFETs and nanowires)
    3) Modeling of quasi-ballistic transport based on the multisubband Boltzmann transport equation (BTE)
    4) Calculation of electronic noise based on the physics-based device simulation and statistical modeling of retention characteristics of DRAM and Flash memory.
    In order to perform the above mentioned researches, I have developed a general purpose multi-dimensional device simulation code written in C++. The code is based on the triangular (2D) and prismatic (3D) meshes, and the implemented transport models include the conventional drift-diffusion and hydrodynamic models with quantum correction based on the density-gradient model, semi-classical multisubband BTE, and the nonequilibrium Green's function model. For the conventional transport models, the code supports the mixed mode transient simulation with arbitrary number of semiconductor devices and lumped circuit elements.
    • AFFILIATED RESEARCH LABORATORY:
    Emerging Electronics Laboratory

    CURRICULUM VITAE:
    Curriculum Vitae (pdf)

    PH.D DISSERTATION:
    Modeling of Quantum Transport in Nano-scale MOSFET Devices (pdf)

    PUBLICATIONS:
    [13] Seonghoon Jin, Massimo V. Fischetti, and Ting-wei Tang, Differential conductance fluctuations in silicon nanowire transistors caused by quasi-ballistic transport and scattering induced intersubband transitions, Applied Physics Letters, 92, 082103 (2008)

    [12] Seonghoon Jin, Ting-wei Tang, and Massimo V. Fischetti, Simulation of silicon nanowire transistors using Boltzmann transport equation under relaxation time approximation, IEEE Transactions on Electron Devices, 55, 727 (2008)

    [11] Myoung Jin Lee, Seonghoon Jin, Chang-Ki Baek, Sung-Min Hong, Soo-Young Park, Hong-Hyun Park, Sang-Don Lee, Sung-Woong Chung, Jae-Goan Jeong, Sung-Joo Hong, Sung-Wook Park, In-Young Chung, Young June Park, and Hong Shick Min, A Proposal on an Optimized Device Structure With Experimental Studies on Recent Devices for the DRAM Cell Transistor, IEEE Transactions on Electron Devices, 54, 3325 (2007)

    [10] Seonghoon Jin, Massimo V. Fischetti, and Ting-wei Tang, Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity, Journal of Applied Physics, 102, 083715 (2007)

    [9] Seonghoon Jin, Massimo V. Fischetti, and Ting-wei Tang, Modeling of Surface Roughness Scattering in Ultrathin-Body SOI MOSFETs, IEEE Transactions on Electron Devices, 54, 2191 (2007)

    [8] Massimo V. Fischetti, Terrance O'Regan, Sudarshan Narayanan, Cathy Sachs, Seonghoon Jin, Jiseok Kim, and Yan Zhang, Theoretical Study of Some Physical Aspects of Electronic Transport in nMOSFETs at the 10 nm Gate-Length, IEEE Transactions on Electron Devices, 54, 2116 (2007)

    [7] Seonghoon Jin, Myoung Jin Lee, Jeong-Hyong Yi, Jae Hoon Choi, Dae Gwan Kang, In-Young Chung, Young June Park, and Hong Shick Min, A New Direct Evaluation Method to Obtain the Data Retention Time Distribution of DRAM, IEEE Transactions on Electron Devices, 53, 2344 (2006)

    [6] Seonghoon Jin, Young June Park, and Hong Shick Min, A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electron-phonon interactions, Journal of Applied Physics, 99, 123719 (2006)

    [5] Seonghoon Jin, Chan Hyeong Park, In-Young Chung, Young June Park, and Hong Shick Min, NANOCAD Framework for Simulation of Quantum Effects in Nanoscale MOSFET Devices, Journal of Semiconductor Technology and Science, 6, 1 (2006)

    [4] Seonghoon Jin, Jeong-Hyong Yi, Jae Hoon Choi, Dae Gwan Kang, Young June Park, and Hong Shick Min, Prediction of data retention time distribution of dynamic random access memory by physics-based statistical simulation, IEEE Transactions on Electron Devices, 52, 2422 (2005)

    [3] Ji-Sun Park, Ji Young Lee, Sangkyung Lee, Hyungsoon Shin, Seonghoon Jin, Young June Park, and Hong Shik Min, A Unified Mobility Model for Quantum Mechanical Simulation of MOSFETs, Journal of the Korean Physical Society, 45, 1332 (2004)

    [2] Seonghoon Jin, Young June Park, and Hong Shick Min, Simulation of quantum effects in the nano-scale semiconductor device, Journal of Semiconductor Technology and Science, 4, 32 (2004)

    [1] Seonghoon Jin, Young June Park, and Hong Shick Min, Simulation of quantum effects and nonlocal transport by using the hydrodynamic density-gradient model, Journal of the Korean Physical Society, 44, 87 (2004)